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| NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTORS ISSUE 1 MARCH 94 FEATURES * 80 Volt VCEO * 1 Amp continuous current * Gain of 2K at IC=1 Amp * Ptot= 1 Watt ZTX602 ZTX603 C B ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation at Tamb = 25C derate above 25C Operating and Storage Temperature Range SYMBOL VCBO VCEO VEBO ICM IC Ptot Tj:Tstg ZTX602 80 60 10 4 1 1 5.7 E-Line TO92 Compatible ZTX603 100 80 UNIT V V V A A W mW/ C C E -55 to +200 ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICBO 80 60 10 0.01 10 IEBO ICES VCE(sat) VBE(sat) VBE(on) 0.1 10 1.0 1.0 1.8 1.7 3-209 ZTX602 MIN. 100 80 10 ZTX603 MAX. V V V A A A A A A A UNIT CONDITIONS. IC=100A IC=10mA* IE=100A VCB=60V VCB=80V VCB=60V,T amb =100C V CB=80V,T amb =100C VEB=8V VCES=60V VCES=80V IC=400mA, IB=0.4mA* IC=1A, IB=1mA* IC=1A, IB=1mA* IC=1A, VCE=5V* MAX. MIN. 0.01 10 0.1 Emitter Cut-Off Current Colllector-Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage 10 1.0 1.0 1.8 1.7 V V V V ZTX602 ZTX603 ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). PARAMETER SYMBOL ZTX602 MIN. Static Forward Current Transfer Ratio hFE 2K 5K 2K 0.5K 150 ZTX603 MAX. IC=50mA, VCE=5V IC=500mA, VCE=5V* IC=1A, VCE=5V* IC=2A, VCE=5V* MHz pF pF s s UNIT CONDITIONS. MAX. MIN. 2K 5K 2K 0.5K 150 90 Typical 15 Typical 0.5 Typical 1.1 Typical 100K 100K Transition Frequency fT Input Capacitance Output Capacitance Switching Times Cibo Cobo ton toff IC=100mA, VCE=10V f=20MHz VEB=500mV, f=1MHz VCB=10V, f=1MHz IC=500mA, VCE=10V IB1=IB2=0.5mA *Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% Maximum Power Dissipation (W) 1.0 R5 = 200K R5 = 50K R5 = 10K R5 = 1M 0.8 R5 = 0.6 0.4 0.2 0 1 10 100 200 DC Conditions ZTX602 ZTX603 VCE - Collector-Emitter Voltage (Volts) Voltage Derating Graph The maximum permissible operational temperature can be obtained from this graph using the following equation T amb (max ) = Power (max ) - Power (act) +25 C 0.0057 Tamb(max)= Maximum operating ambient temperature Power(max) = Maximum power dissipation figure, obtained from the above graph for a given VCE and source resistance (RS) Power(actual)= Actual power dissipation in users circuit 3-210 ZTX602 ZTX603 TYPICAL CHARACTERISTICS 1.6 1.4 1.8 -55C +25C +100C +175C hFE - Gain normalised to 1 Amp 2.5 -55C +25C +100C 2.0 1.5 VCE=5V VCE(sat) - (Volts) 1.2 1.0 0.8 0.6 0.4 0.2 0 0.01 0.1 1 10 IC/IB=100 1.0 0.5 0.001 0.01 0.1 1 10 IC - Collector Current (Amps) IC - Collector Current (Amps) VCE(sat) v IC hFE v IC 2.2 2.0 VBE(sat) - (Volts) 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 -55C +25C +100C +175C 2.0 1.8 1.6 -55C +25C +100C VBE - (Volts) 1.4 1.2 1.0 0.8 0.6 0.4 VCE=5V IC/IB=100 0.01 0.1 1 10 0.2 0.01 0.1 1 10 IC - Collector Current (Amps) IC - Collector Current (Amps) VBE(sat) v IC Single Pulse Test at Tamb=25C 10 VBE(on) v IC IC - Collector Current (Amps) 1 D.C. 1s 100ms 10ms 1.0ms 100s 0.1 ZTX602 ZTX603 0.01 1 10 100 1000 VCE - Collector Voltage (Volts) Safe Operating Area 3-211 |
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